The principle of ion plating process was proposed by Mattox in 1963. The dissociation rate of the traditional ion plating process is 0.1~1%, the hollow cathode discharge plasma ion plating method (Hollow Cathode Discharge Plasma Ion Plating) increases the dissociation rate to >40~70%, and the Cathodic Vacuum Arc method dissociation rate will reach >40~90%.

The composite diamond-like carbon film process technology, with a film hardness of 3,700 HV, a thickness of 3 μm, and a friction coefficient of approximately 0.1 available for mass production.