• Atomic Layer Deposition System
  • Atomic Layer Deposition System
  • Atomic Layer Deposition System
  • Atomic Layer Deposition System

Atomic Layer Deposition System

Model : DYALD

Atomic Layer Deposition (ALD) is a new process that can be used to replace chemical vapor deposition (CVD), plasma-assisted chemical vapor deposition (PECVD), and sputtering technologies. Atomic layer deposition is also a type of chemical vapor deposition (CVD) technology. The difference from CVD is that ALD divides the traditional CVD reaction process into two half-reactions. One is the Chemisorption saturation process of the precursors, and the other is the Sequential surface chemical reaction process.

The precursor product and the material surface undergo a continuous, self-limiting (Self-limiting) reaction. The material is slowly deposited by reacting with different precursor products separately, and the substance is plated on the surface of the substrate in the form of a single atomic layer. The deposition of a material at  (1 ~ 2 Å), so the growth of ALD material is controlled in the thickness range of a single atomic layer, forming a step coverage and large area uniformity.

Atomic layer deposition has the characteristics of high density, high thickness uniformity, high step coverage, low temperature process and atomic-level precise thickness control. In addition to ultra-thin and high-dielectric material coating, it can also target tiny circuit structures. Provide hole filling ability, such as the structure with high aspect ratio and related areas to provide a uniform thickness coating. Atomic layer deposition is a key semiconductor device assembly method, and it can also become a future development area in some nano material synthesis methods, including semiconductor integrated circuits, micro-electromechanical, thin-film transistors, OLED displays and component packaging.

Model

ALD T50

ALD PT50

ALD T100

ALD T200

Applicable substrate size

    2”

   2”

   4”

   8”

Precursor pipeline

3

3

5

5

Range of working temperature

RT~400℃

Plasma power

NA

600

NA

NA

Process materials

OxideSulfide

Oxide、Nitride

OxideSulfide

OxideSulfide

  1. Special chamber cavity flow channel design improves the efficiency of precursor transportation.
  2. The thickness mistiness rate is less than 2%.
  3. Films with large area, uniformity, and chemical dose ratio can be grown, and structures with high aspect ratios still have excellent step coverage.
  4. Accurately controlled film thickness with atomic precision.
  5. Low temperature process.
  6. Dense and pinhole free deposition.
  1. High dielectric materials (Al2O3, HfO2, ZrO2, Ta2O5)
  2. Catalyst catalytic materials (Pt, Ir, Co, TiO2)
  3. Biomedical coatings (TiN, ZrN, CrN)
  4. Electroluminescence (SrS: Cu, ZnS: Mn, ZnS: Tb)
  5. Gas barrier film (Al2O3)
  6. Transparent conductive film (ZnO: Al, ITO)