Atomic Layer Deposition (ALD) is a new process that can be used to replace chemical vapor deposition (CVD), plasma-assisted chemical vapor deposition (PECVD), and sputtering technologies. Atomic layer deposition is also a type of chemical vapor deposition (CVD) technology. The difference from CVD is that ALD divides the traditional CVD reaction process into two half-reactions. One is the Chemisorption saturation process of the precursors, and the other is the Sequential surface chemical reaction process.
Atomic layer deposition has the characteristics of high density, high thickness uniformity, high step coverage, low temperature process and atomic-level precise thickness control. In addition to ultra-thin and high-dielectric material coating, it can also target tiny circuit structures. Provide hole filling ability, such as the structure with high aspect ratio and related areas to provide a uniform thickness coating. Atomic layer deposition is a key semiconductor device assembly method, and it can also become a future development area in some nano material synthesis methods, including semiconductor integrated circuits, micro-electromechanical, thin-film transistors, OLED displays and component packaging.